Peer-Reviewed Journal Details
Mandatory Fields
Joyce, S;Murphy-Armando, F;Fahy, S
2007
April
Physical Review B
First-principles calculation of p-type alloy scattering in Si1-xGex
Validated
WOS: 12 ()
Optional Fields
STRAINED SI ELECTRON-MOBILITY SIXGE1-X ALLOYS HOLE MOBILITY SEMICONDUCTORS SUBSTRATE DEVICES MODEL
75
The p-type carrier scattering rate due to alloy disorder in Si1-xGex alloys is obtained from first principles. The required alloy scattering matrix elements are calculated from the energy splitting of the valence bands, which arise when one average host atom is replaced by a Ge or Si atom in supercells containing up to 128 atoms. Alloy scattering within the valence bands is found to be characterized by a single scattering parameter. The hole mobility is calculated from the scattering rate using the Boltzmann transport equation in the relaxation time approximation. The results are in good agreement with experiments on bulk, unstrained alloys.
COLLEGE PK
1098-0121
10.1103/PhysRevB.75.155201
Grant Details