Byun, KY;Fleming, P;Bennett, N;Gity, F;McNally, P;Morris, M;Ferain, I;Colinge, C

2011

June

Journal of Applied Physics

Comprehensive investigation of Ge-Si bonded interfaces using oxygen radical activation

Validated

WOS: 19 ()

ULTRA-HIGH-VACUUM SILICON PHOTODETECTORS SURFACE LAYERS

109

In this work, we investigate the directly bonded germanium-silicon interfaces to facilitate the development of high quality germanium silicon hetero integration at the wafer scale. X-ray photoelectron spectroscopy data is presented which provides the chemical composition of the germanium surfaces as a function of the hydrophilic bonding reaction at the interface. The bonding process induced long range deformation is detected by synchrotron x-ray topography. The hetero-interface is characterized by measuring forward and reverse current, and by high resolution transmission electron microscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3601355]

MELVILLE

0021-8979

10.1063/1.3601355