Shayesteh, M;Daunt, CLM;O'Connell, D;Djara, V;White, M;Long, B;Duffy, R

2011

November

IEEE Transactions On Electron Devices

NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices

Validated

()

SCHOTTKY-BARRIER HEIGHT NICKEL GERMANIDE GE DOPANTS SB

58

3801

3807

In this paper, the contact resistivity of NiGe on n-doped Ge is extracted. Although phosphorus is the slowest n-type dopant in terms of diffusion in Ge, the corresponding contact resistivity data for this dopant are sparse. Contact resistivity dependence on implant dose will be determined, as well as a comparison of phosphorus-and arsenic-doped Ge layers. The impact of high contact resistance is evaluated for future technology n-type metal-oxide-semiconductor germanium devices.

PISCATAWAY

0018-9383

10.1109/TED.2011.2164801