Peer-Reviewed Journal Details
Mandatory Fields
Shayesteh, M;Daunt, CLM;O'Connell, D;Djara, V;White, M;Long, B;Duffy, R
2011
November
IEEE Transactions On Electron Devices
NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices
Validated
Optional Fields
SCHOTTKY-BARRIER HEIGHT NICKEL GERMANIDE GE DOPANTS SB
58
3801
3807
In this paper, the contact resistivity of NiGe on n-doped Ge is extracted. Although phosphorus is the slowest n-type dopant in terms of diffusion in Ge, the corresponding contact resistivity data for this dopant are sparse. Contact resistivity dependence on implant dose will be determined, as well as a comparison of phosphorus-and arsenic-doped Ge layers. The impact of high contact resistance is evaluated for future technology n-type metal-oxide-semiconductor germanium devices.
PISCATAWAY
0018-9383
10.1109/TED.2011.2164801
Grant Details