Ye, N;Yang, H;Gleeson, M;Pavarelli, N;Zhang, HY;O'Callaghan, J;Han, W;Nudds, N;Collins, S;Gocalinska, A;Pelucchi, E;O'Brien, P;Gunning, FCG;Peters, FH;Corbett, B

2015

July

IEEE Photonics Technology Letters

InGaAs Surface Normal Photodiode for 2 mu m Optical Communication Systems

Validated

WOS: 12 ()

WAVELENGTH

27

1469

1472

High bandwidth 2-mu m wavelength surface normal p-i-n photodiodes using a high indium-content InGaAs strain-relaxed absorbing layer clad by p-and n-doped AlInGaAs layers are realized. A parabolic grading was used to relax the lattice constant from that of the InP substrate. We compare structures with different p-doping profiles and absorber thicknesses to achieve a 3-dB bandwidth of similar to 10 GHz while maintaining a photoresponsivity of 0.93 A/W. A clear opening of the 10-Gb/s eye pattern was obtained with an input power of -3.07 dBm. By temperature-control of the mesa passivation process, the device leakage was reduced to 0.52 mu A at -5 V bias.

PISCATAWAY

1041-1135

10.1109/LPT.2015.2416346