Conference Publication Details
Mandatory Fields
Pelaz, L;Marques, L;Aboy, M;Lopez, P;Santos, I;Duffy, R
2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING
Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices
2009
January
Validated
1
WOS: 7 ()
Optional Fields
SILICON
479
Combined Molecular Dynamics and Kinetic Monte Carlo simulations are used in hierarchical models to gain physical understanding for process optimization in advanced devices. Thermal budget for the removal of defects in advanced millisecond anneals is evaluated. Alternatives to overcome the imperfect regrowth of narrow Si structures are proposed. The compromise between implant and anneal parameters for doping of FinFETs are presented, considering lateral diffusion and activation.
Grant Details