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Authors

Pelaz, L;Marques, L;Aboy, M;Lopez, P;Santos, I;Duffy, R

Conference Title

2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING

Title of Paper

Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices

Year

2009

Month

January

Status

Validated

Peer Reviewed

Times Cited

()

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SILICON

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Start Page

479

End Page

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Abstract

Combined Molecular Dynamics and Kinetic Monte Carlo simulations are used in hierarchical models to gain physical understanding for process optimization in advanced devices. Thermal budget for the removal of defects in advanced millisecond anneals is evaluated. Alternatives to overcome the imperfect regrowth of narrow Si structures are proposed. The compromise between implant and anneal parameters for doping of FinFETs are presented, considering lateral diffusion and activation.

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