Zubialevich, VZ; Rzheutski, MV; Li, HN; Sadler, TC; Alam, SN; Bhardwaj, V; Lutsenko, EV; Yablonskii, GP; Parbrook, PJ

2018

February

Journal of Luminescence

InxAl1-xN/Al0.53Ga0.47N multiple quantum wells on Al0.5Ga0.5N buffer with variable in-plane lattice parameter

Validated

WOS: 2 ()

Chemical-vapor-deposition Ingan Luminescence Sapphire Layers

194

797

802

The structural and luminescent properties of InxAl1-xN/Al0.53Ga0.47N multiple quantum wells (MQW) grown on an Al0.5Ga0.5N buffer partially relaxed with respect to an underlying AlN-template are reported. A significant redshift and improvement of ultraviolet (UV) photoluminescence (PL) intensity is found for InAlN MQWs grown on AlGaN buffers with higher relaxation degree. This is attributed to a higher QW indium incorporation as confirmed also by X-ray diffraction (XRD). The nature of room temperature time resolved PL is studied and discussed from the point of view of the possibility of a type I-type II band lineup transition in the InAlN-AlGaN system.

AMSTERDAM

0022-2313

10.1016/j.jlumin.2017.09.053