Gity, F;Byun, KY;Lee, KH;Cherkaoui, K;Hayes, JM;Morrison, AP;Colinge, C;Corbett, B

2012

February

Applied Physics Letters

Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation

Validated

WOS: 25 ()

PERFORMANCE HYDROGEN PHOTODETECTOR SIGE

100

The current transport across a p-Ge/n-Si diode structure obtained by direct wafer bonding and layer exfoliation is analysed. A low temperature anneal at 400 degrees C for 30 min was used to improve the forward characteristics of the diode with the on/off ratio at -1 V being > 8000. Post anneal, the transport mechanism has a strong tunnelling component. This fabrication technique using a low thermal budget (T <= 400 degrees C) is an attractive option for heterogeneous integration. (C) 2012 American Institute of Physics. [doi:10.1063/1.3688174]

MELVILLE

0003-6951

10.1063/1.3688174