Mandatory Fields

Authors

Huet, K;Shayesteh, M;Toque-Tresonne, I;Negru, R;Daunt, CLM;Kelly, N;O'Connell, D;Yu, R;Djara, V;Carolan, P;Petkov, N;Duffy, R

Conference Title

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1

Title of Paper

Laser thermal anneal formation of atomically-flat low-resistive germanide contacts

Year

2014

Month

January

Status

Validated

Peer Reviewed

Times Cited

WOS: 3 ()

Optional Fields

Keywords

Editors

Start Page

169

End Page

173

Location

Start Date

End Date

Abstract

In this work, state-of-the-art laser thermal annealing (LTA) is used to form germanide contacts on n-doped Ge, and is compared to results generated by rapid thermal annealing (RTA). Surface topography, interface quality, crystal structure, and material stoichiometry are explored for both techniques. For electrical characterization, specific contact resistivities rho(c) are extracted. It is shown that LTA can produce a uniform contact with a remarkably smooth substrate interface, with rho(c) 2-3 orders of magnitude lower than the equivalent RTA case. A rho(c) of 2.84x10(-7) Omega cm(2) is achieved for optimized LTA parameters. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Funded By

URL

DOI Link

10.1002/pssc.201300168

Grant Details

Funding Body

Grant Details