Young, RJ;Mereni, LO;Petkov, N;Knight, GR;Dimastrodonato, V;Hurley, PK;Hughes, G;Pelucchi, E

2010

April

Journal of Crystal Growth

Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells

Validated

WOS: 13 ()

TEMPERATURE EXCITONS OXIDE

312

1546

1550

We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (1 0 0) surface of the host InP substrate. Quantum wells were grown on InP substrates misorientated by 0 degrees, 0.2 degrees, 0.4 degrees and 0.6 degrees; 0.4 degrees was found to consistently result in the narrowest peaks, with the optimal spectral purity of similar to 4.25 meV found from a 15 nm quantum well. The width of the emission from the 15 nm quantum well was used to optimize the growth parameters. Thick layers of Si-doped InGaAs were then grown and found to have bulk, low temperature (77 K) electron mobilities up to mu similar to 3.5 x 10(4) cm(2)/V s with an electron concentration of similar to 1 x 10(16). (C) 2010 Elsevier B.V. All rights reserved.

AMSTERDAM

0022-0248

10.1016/j.jcrysgro.2010.01.033