Peer-Reviewed Journal Details
Mandatory Fields
Murphy-Armando, F;Fahy, S
2011
December
Journal of Applied Physics
First principles calculation of electron-phonon and alloy scattering in strained SiGe
Validated
WOS: 15 ()
Optional Fields
MOBILITY GE SEMICONDUCTORS PARAMETERS POTENTIALS TRANSPORT SI1-XGEX SILICON
110
First-principles electronic structure methods are used to predict the mobility of n-type carrier scattering in strained SiGe. We consider the effects of strain on the electron-phonon deformation potentials and the alloy scattering parameters. We calculate the electron-phonon matrix elements and fit them up to second order in strain. We find, as expected, that the main effect of strain on mobility comes from the breaking of the degeneracy of the six Delta and L valleys, and the choice of transport direction. The non-linear effects on the electron-phonon coupling of the Delta valley due to shear strain are found to reduce the mobility of Si-like SiGe by 50% per % strain. We find increases in mobility between 2 and 11 times that of unstrained SiGe for certain fixed Ge compositions, which should enhance the thermoelectric figure of merit in the same order, and could be important for piezoresistive applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3669446]
MELVILLE
0021-8979
10.1063/1.3669446
Grant Details