Peer-Reviewed Journal Details
Mandatory Fields
Dimastrodonato, V;Pelucchi, E;Vvedensky, DD
2012
June
Physical Review Letters
Self-Limiting Evolution of Seeded Quantum Wires and Dots on Patterned Substrates
Validated
WOS: 34 ()
Optional Fields
MOLECULAR-BEAM EPITAXY GROWTH GAAS HETEROSTRUCTURES EMISSION SURFACE
108
Extensive experimental data and an accompanying theoretical model are presented for the self-limiting profiles and Ga segregation on patterned GaAs(111)B substrates during metalorganic vapor-phase epitaxy of A1(x)Ga1-As-x. Self-limiting widths and segregation of Ga produce quantum dots along the base of pyramidal recesses bounded by (111)A planes and quantum wires along the vertical axis of the template, respectively. Coupled reaction-diffusion equations for precursor and adatom kinetics reproduce the measured concentration and temperature dependence of the self-limiting width and segregation. Our model can be extended to other patterned systems, providing a new paradigm for predicting the morphology of surface nanostructures and inferring their quantum optical properties.
COLLEGE PK
0031-9007
10.1103/PhysRevLett.108.256102
Grant Details