In this paper, the authors investigate how target sputtering, dose retention, and damage formation is generated in thin-body semiconductors by means of energetic ion impacts. The problems associated with ion implanting or plasma doping Si thin-bodies are well documented, however, it is not clear how changing the target material to other semiconductors currently being considering for multi-gate field-effect transistor devices will counteract or enhance these effects. By means of binary collision approximation based modeling with the Stopping and Range of Ions in Matter (SRIM) software, we explore the consequences of different target atomic density, lattice density, surface binding energies, and lattice binding energies on target sputtering, dose retention, and damage formation.