Peer-Reviewed Journal Details
Mandatory Fields
Pelucchi, E;Watanabe, S;Leifer, K;Zhu, Q;Dwir, B;De Los Rios, P;Kapon, E
2007
May
Nanoletters
Mechanisms of quantum dot energy engineering by metalorganic vapor phase epitaxy on patterned nonplanar substrates
Validated
WOS: 49 ()
Optional Fields
INVERTED PYRAMIDS CRYSTALS GROWTH
7
1282
1285
A novel technique for tuning the strength of quantum confinement in site-controlled semiconductor quantum dots (QDs) is introduced and investigated theoretically and experimentally. The method makes use of controlled local growth rates during metalorganic vapor phase epitaxy on patterned arrays of inverted pyramids. A model accounting for precursor migration and adatom incorporation predicts the tuning in QD thickness as a function of the pattern parameters. The results are in good agreement with experimental findings. This technique offers means for designing QD photonic structures with potential applications in QD-based cavity quantum electrodynamics and quantum information processing.
WASHINGTON
1530-6984
10.1021/nl0702012
Grant Details