Pelucchi, E;Watanabe, S;Leifer, K;Zhu, Q;Dwir, B;De Los Rios, P;Kapon, E

2007

May

Nanoletters

Mechanisms of quantum dot energy engineering by metalorganic vapor phase epitaxy on patterned nonplanar substrates

Validated

WOS: 49 ()

INVERTED PYRAMIDS CRYSTALS GROWTH

7

1282

1285

A novel technique for tuning the strength of quantum confinement in site-controlled semiconductor quantum dots (QDs) is introduced and investigated theoretically and experimentally. The method makes use of controlled local growth rates during metalorganic vapor phase epitaxy on patterned arrays of inverted pyramids. A model accounting for precursor migration and adatom incorporation predicts the tuning in QD thickness as a function of the pattern parameters. The results are in good agreement with experimental findings. This technique offers means for designing QD photonic structures with potential applications in QD-based cavity quantum electrodynamics and quantum information processing.

WASHINGTON

1530-6984

10.1021/nl0702012