Conroy, Michele,Zubialevich, Vitaly Z.,Li, Haoning,Petkov, Nikolay,O’Donoghue, Sally,Holmes, Justin D.,Parbrook, Peter J.

2016

Unknown

ACS Nano

Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach

Published

Altmetric: 3 ()

Aluminum nitride Growth mechanism III-nitrides Nanorods Nanowires

10

2

1988

1994

Nanostructured semiconductors have a clear potential for improved optoelectronic devices, such as high-efficiency light-emitting diodes (LEDs). However, most arrays of semiconductor nanorods suffer from having relatively low densities (or “fill factors”) and a high degree of nonuniformity, especially when produced by self-organized growth. Ideally an array of nanorods for an optoelectronic emitter should have a fill factor close to 100%, with uniform rod diameter and height. In this article we present a “space-filling” approach for forming defect-free arrays of AlN nanorods, whereby the separation between each rod can be controlled to 5 nm due to a self-limiting process. These arrays of pyramidal-topped AlN nanorods formed over wafer-scale areas by metal organic chemical vapor deposition provide a defect-free semipolar top surface, for potential optoelectronic device applications with the highest reported fill factor at 98%.

1936-0851

http://dx.doi.org/10.1021/acsnano.5b06062

10.1021/acsnano.5b06062