Murphy-Armando, Felipe; Liu, Chang; Zhao, Yi; Duffy, Ray

13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Mind the drain from strain: effects of strain on the leakage current of Si diodes

2016

October

Validated

0

()

Elemental semiconductors Leakage currents Semiconductor diodes Silicon Si Ab-initio calculations Band-to-band tunneling Compressive strain Trap-assisted tunneling Current measurement Strain Stress Temperature dependence Tunneling

802

804

Hangzhou, China

25-OCT-16

28-OCT-16

We present a systematic study of the impact of strain on off-state leakage current, using experimental data and ab-initio calculations. We developed new models to account for the impact of strain on band-to-band tunneling and trap-assisted tunneling in silicon. We observe that the strain can dramatically increase the leakage current, depending on the type of tunneling involved. We predict that 1% compressive strain can increase the band-to-band tunneling and Shockley Read Hall leakage currents by over 5 and 3 times, respectively.

10.1109/ICSICT.2016.7999046