Peer-Reviewed Journal Details
Mandatory Fields
Sabui, G;Zubialevich, VZ;Pampili, P;White, M;Parbrook, PJ;McLaren, M;Arredondo-Arechavala, M;Shen, ZJ
2017
January
ECS Transactions
Simulation Study of High Voltage Vertical GaN Nanowire Field Effect Transistors
Validated
WOS: 7 ()
Optional Fields
ON-RESISTANCE CHANNEL HEMTS
80
69
85
Concept of vertical Gallium Nitride (GaN) nanowire field effect transistors (NWFETs) for high voltage power electronic applications is investigated through three dimensional (3D) TCAD simulations in this paper. The proposed GaN NWFET can operate either in a normally-off or a normally-on mode depending on the specific device design. A gate-all-around (GAA) structure coupled with a strong dielectric REduced SURface Field (RESURF) effect has the potential to offer blocking voltages over 900 V with very low specific on-resistance for the NWFETs. V-RB(2)/R-ON and Q(GD) x R-DS(ON) Figures of Merits (FoMs) of the NWFET are extracted and compared with other state of the art GaN, SiC and Si field effect transistors to get a comparative understanding of the potential of the NW architecture for high voltage applications.
PENNINGTON
1938-5862
10.1149/08007.0069ecst
Grant Details