Peer-Reviewed Journal Details
Mandatory Fields
Gity, F.; Ansari, L.; König⁠, C.; Verni, G. A.; Holmes, J. D.; Long, B.; Lanius, M.; Schüffelgen, P.; Mussler, G.; Grützmacher, D.; Greer, J. C.
2018
March
Microelectronic Engineering
Metal-semimetal Schottky diode relying on quantum confinement
Published
WOS: 7 ()
Optional Fields
Bismuth Native oxide Quantum confinement Schottky junction Semimetal XPS
195
21
25
Quantum confinement in a semimetal thin film such as bismuth (Bi) can lead to a semimetal-to-semiconductor transition which allows for the use of semimetals as semiconductors when patterned at nanoscale lengths. Bi native oxide on Bi thin film grown by molecular beam epitaxy (MBE) is investigated using X-ray photoelectron spectroscopy (XPS) to measure the elemental composition of the oxide. Also, an in-situ argon plasma etch step is developed allowing for the direct coating of the surface of thin Bi films by a metal contact to form a Schottky junction. Model structures of rhombohedral [111] and [110] bismuth thin films are found from density functional theory (DFT) calculations. The electronic structure of the model thin films is investigated using a GW correction and the formation of an energy band gap due to quantum confinement is found. Electrical characterization of the fabricated Bi-metal Schottky diode confirms a band gap opening in Bi thin film for a film thickness of approximately 5¿nm consistent with the theoretical calculations.
Amsterdam, Netherlands
0167-9317
http://www.sciencedirect.com/science/article/pii/S0167931718301369
10.1016/j.mee.2018.03.022
Grant Details
Science Foundation Ireland
Principal Investigator Award No. 13/IA/1956