Peer-Reviewed Journal Details
Mandatory Fields
Brennan, B,Milojevic, M,Kim, HC,Hurley, PK,Kim, J,Hughes, G,Wallace, RM;
2009
May
Electrochemical and Solid State Letters
Half-Cycle Atomic Layer Deposition Reaction Study Using O-3 and H2O Oxidation of Al2O3 on In0.53Ga0.47As
Validated
()
Optional Fields
aluminium ammonium compounds atomic layer deposition gallium arsenide III-V semiconductors indium compounds oxidation passivation GAAS
12
205
207
The effect of water and ozone as the oxidant in the atomic layer deposition (ALD) of aluminum oxide on the ammonium-sulfide-passivated In0.53Ga0.47As surface is compared using X-ray photoelectron spectroscopy (XPS) after each "half-cycle" of the ALD process. While the first half-cycle of the aluminum precursor tri-methyl aluminum (TMA) reduces the residual native oxides to within detection limits of XPS, the ozone oxidation process causes significant reoxidation of the substrate in comparison to the water-based process. Subsequent TMA pulses fail to remove the excess interfacial oxides caused by ozone oxidation, resulting in the formation of an oxide interlayer.
DOI 10.1149/1.3109624
Grant Details