Chikoidze, E,Nolan, M,Modreanu, M,Sallet, V,Galtier, P;

2008

August

Thin Solid Films

Effect of chlorine doping on electrical and optical properties of ZnO thin films

Validated

()

ZnO 15.Gh 73.61s. 78.30.Fs 78.40 78.60.Hk TOTAL-ENERGY CALCULATIONS AUGMENTED-WAVE METHOD ZINC-OXIDE SUBSTRATE-TEMPERATURE SPRAY-PYROLYSIS BASIS-SET SEMICONDUCTORS GROWTH DEPOSITION ACID

516

8146

8149

Chlorine doped ZnO thin films were grown by metal-organic chemical vapour deposition (MOCVD) on sapphire and fused silica substrates. Chlorine is incorporated by substitution of oxygen and acts as a donor, leading to an increase of electron concentration. Transport properties were studied for ZnO thin films with different chlorine content. Hall effect measurements show an increase of electron carrier concentration and a decrease of electron mobility upon increasing the amount of chlorine incorporated in ZnO. The lowest resistivity rho=3.6x10(-3) Omega cm was obtained for layers deposited on sapphire substrate. UV-VIS-NIR spectroscopy has been used for the study of optical properties. For all samples, the optical transmittance in the visible range is greater than 80%. First principles computations were applied in order to examine the change in the band gap of ZnO with Cl doping. (C) 2008 Elsevier B.V. All rights reserved.

DOI 10.1016/j.tsf.2008.04.076