Shin, B,Cagnon, J,Long, RD,Hurley, PK,Stemmer, S,McIntyre, PC;

2009

September

Electrochemical and Solid State Letters

Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001)

Validated

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alumina atomic layer deposition energy gap etching Fermi level gallium arsenide III-V semiconductors indium compounds semiconductor-insulator boundaries thermally stimulated desorption GAAS PASSIVATION SILICON

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An unpinned interface between an Al2O3 layer deposited by atomic layer deposition (ALD) and a chemically treated n-In0.53Ga0.47As(001) is demonstrated. The starting surface was prepared by wet etching with NH4OH(aq) followed by a thermal desorption of residual As at 380 degrees C immediately before ALD. Analysis of temperature-dependent capacitance-voltage measurements suggests that the Fermi level can sweep through the bandgap of In0.53Ga0.47As, attaining true accumulation and inversion despite the presence of In oxide and In hydroxide at the interface. This is in contrast to the situation for residual As-related interfacial species, which have been reported to pin the Fermi level at oxide/III-V interfaces.

DOI 10.1149/1.3139603