Peer-Reviewed Journal Details
Mandatory Fields
Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P
2009
July
Applied Physics Letters
Electrical characterization of the soft breakdown failure mode in MgO layers
Validated
WOS: 9 ()
Optional Fields
GATE OXIDES STRESS CONDUCTION
95
1
012901-1
012901-3

The soft breakdown (SBD) failure mode in 20 nm thick MgO dielectric layers grown on Si substrates was investigated. We show that during a constant voltage stress, charge trapping and progressive breakdown coexist, and that the degradation dynamics is captured by a power-law time dependence. We also show that the SBD current-voltage (I-V) characteristics follow the power-law model I = aV(b) typical of this conduction mechanism but in a wider voltage window than the one reported in the past for SiO2. The relationship between the magnitude of the current and the normalized differential conductance was analyzed.

10.1063/1.3167827
Grant Details