Peer-Reviewed Journal Details
Mandatory Fields
Dobaczewski, L,Bernardini, S,Kruszewski, P,Hurley, PK,Markevich, VP,Hawkins, ID,Peaker, AR;
2008
June
Applied Physics Letters
Energy state distributions of the P-b centers at the (100), (110), and (111) Si/SiO2 interfaces investigated by Laplace deep level transient spectroscopy
Validated
()
Optional Fields
ELECTRON-SPIN-RESONANCE PB1 HYPERFINE SPECTRUM SI BAND-GAP DEPENDENT RECOMBINATION SILICON-WAFERS SEMICONDUCTORS DEFECTS DENSITIES CHARGE TRAPS
92
The energy distribution of the P-b centers at the Si/SiO2 interface has been determined using isothermal laplace deep level transient spectroscopy. For the (111) and (110) interface orientations, the distributions are similar and centered at 0.38 eV below the silicon conduction band. This is consistent with only P-b0 states being present. For the (100) orientation, two types of the interface states are observed: one similar to the (111) and (110) orientations while the other has a negative-U character in which the emission rate versus surface potential dependence is qualitatively different from that observed for P-b0 and is presumed to be P-b1. (C) 2008 American Institute of Physics.
ARTN 242104
Grant Details