Peer-Reviewed Journal Details
Mandatory Fields
O'Connor, E,Long, RD,Cherkaoui, K,Thomas, KK,Chalvet, F,Povey, IM,Pemble, ME,Hurley, PK,Brennan, B,Hughes, G,Newcomb, SB;
2008
January
Applied Physics Letters
In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
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Optional Fields
GAAS HYDROGEN SURFACE FILMS
92
We have studied an in situ passivation of In0.53Ga0.47As, based on H2S exposure (50-350 degrees C) following metal organic vapor phase epitaxy growth, prior to atomic layer deposition of HfO2 using Hf[N(CH3)(2)](4) and H2O precursors. X-ray photoelectron spectroscopy revealed the suppression of As oxide formation in air exposed InGaAs surfaces for all H2S exposure temperatures. Transmission electron microscopy analysis demonstrates a reduction of the interface oxide between the In0.53Ga0.47As epitaxial layer and the amorphous HfO2 resulting from the in situ H2S passivation. The capacitance-voltage and current-voltage behavior of Pd/HfO2/In0.53Ga0.47As/InP structures demonstrates that the electrical characteristics of samples exposed to 50 degrees C H2S at the end of the metal-organic vapor-phase epitaxy In0.53Ga0.47As growth are comparable to those obtained using an ex situ aqueous (NH4)(2)S passivation. (c) 2008 American Institute of Physics.
ARTN 022902
Grant Details