Peer-Reviewed Journal Details
Mandatory Fields
O'Sullivan, JA,McCarthy, KG,Murphy, AC,Murphy, PJ;
2006
April
IEEE Microwave and Wireless Components Letters
Investigation into SiGe HBT class E/F PA efficiency at 2 GHz for VDD from 1 to 1.8 V
Validated
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Optional Fields
class E/F heterojunction bipolar transistor (HBT) RFIC power amplifier (PA) POWER-AMPLIFIER
16
170
172
This letter presents a 2-GHz SiGe heterojunction bipolar transistor fully integrated class E/F power amplifier (PA) design operating at low supply voltage. A maximum measured power added efficiency (PAE) of 39% is achieved for a supply voltage of 1.8 V. At I V, a maximum PAE of 36% is measured. The PA was fabricated using an advanced 0.18-mu m BiCMOS process.
DOI 10.1109/LMWC.2006.872144
Grant Details