Duane, R,Mathewson, A,Concannon, A;

2003

March

IEEE Electron Device Letters

Bistable gated bipolar device

Validated

()

MOS devices negative resistance devices RESONANT-TUNNELING DIODES HIGH-PERFORMANCE MOSFETS DTMOS

24

661

663

We report a semiconductor device that exhibits a negative differential resistance characteristic. The device has the same structure as metal-oxide-semi conductor (MOS) transistors currently used in integrated circuits. Biasing the structure in the subthreshold regime and sweeping the bulk bias results in the negative differential resistance characteristic. The device exhibits a peak valley current ratio of approximately 52 at room temperature while drawing ten nanoampers of current which is of sufficiently low power for ultra-large scale integration (ULSI) applications.

DOI 10.1109/LED.2003.817374