Uskov, AV,O'Reilly, EP,McPeake, D,Ledentsov, NN,Bimberg, D,Huyet, G;

2004

January

Applied Physics Letters

Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states

Validated

()

LINEWIDTH ENHANCEMENT FACTOR SEMICONDUCTOR-LASER FILAMENTATION DEPENDENCE GAIN

84

272

274

The carrier-induced refractive index in quantum dot (QD) structures due to optical transitions from QD levels to continuum states is considered. It is shown that, for large photon energies, the refractive index change is given asymptotically by the Drude formula. Calculations of the linewidth enhancement factor, alpha, show that alphasimilar to1 due to this contribution to the total refractive index. Furthermore, for highly localized QD states, the absorption coefficient at the photon energies similar to0.8-1.0 eV due to these transitions can be on the order of 10(3) m(-1). (C) 2004 American Institute of Physics.

DOI 10.1063/1.1639933