Peer-Reviewed Journal Details
Mandatory Fields
Tomic, S,O'Reilly, EP;
2003
January
IEEE Photonics Technology Letters
Optimization of material parameters in 1.3-mu m InGaAsN-GaAs lasers
Validated
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Optional Fields
dilute nitride materials InGaAsN semiconductor lasers 1.3-mu m emission QUANTUM-WELL LASERS 1.3 MU-M ROOM-TEMPERATURE BAND-GAP GAIN NITROGEN
15
6
8
We use a 10-band k (.) p Hamiltonian to investigate gain characteristics of 1.3-mum InGaAsN-GaAs 7-nm quantum-well lasers as a function of indium and nitrogen content. The parameters used were obtained by comparison with experimental transition energy data and fitting to measured spontaneous-emission line broadening. We conclude that optimum device performance is obtained by including the minimum amount of nitrogen necessary to prevent strain relaxation at the given well thickness.
DOI 10.1109/LPT.2002.805794
Grant Details