Tomic, S,O'Reilly, EP;

2003

January

IEEE Photonics Technology Letters

Optimization of material parameters in 1.3-mu m InGaAsN-GaAs lasers

Validated

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dilute nitride materials InGaAsN semiconductor lasers 1.3-mu m emission QUANTUM-WELL LASERS 1.3 MU-M ROOM-TEMPERATURE BAND-GAP GAIN NITROGEN

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We use a 10-band k (.) p Hamiltonian to investigate gain characteristics of 1.3-mum InGaAsN-GaAs 7-nm quantum-well lasers as a function of indium and nitrogen content. The parameters used were obtained by comparison with experimental transition energy data and fitting to measured spontaneous-emission line broadening. We conclude that optimum device performance is obtained by including the minimum amount of nitrogen necessary to prevent strain relaxation at the given well thickness.

DOI 10.1109/LPT.2002.805794