Jackson, JC,Donnelly, J,O'Neill, B,Kelleher, AM,Healy, G,Morrison, AP,Mathewson, A;

2003

March

Electronic Letters

Integrated bulk/SOI APD sensor: Bulk substrate inspection with Geiger-mode avalanche photodiodes

Validated

()

IMAGE SENSOR

39

735

736

A rapid assessment of bulk silicon quality after removal of the silicon-on-insulator (SOI) and buried oxide layer using both plasma and wet etch is compared with standard p-epi silicon by comparing the performance of avalanche photodiodes (APD) operated in Geiger-mode. Plasma etching of the buried oxide shows lower dark counts than wet etched or standard p-epi substrates.

DOI 10.1049/el:20030490