Moloney, AM,Morrison, AP,Jackson, JC,Mathewson, A,Alderman, J,Donnelly, J,O'Neill, B,Kelleher, AM,Healy, G,Murphy, PJ;

2003

February

Electronic Letters

Monolithically integrated avalanche photodiode and transimpedance amplifier in a hybrid bulk/SOI CMOS process

Validated

()

DETECTOR

39

391

392

A novel monolithically integrated silicon-on-insulator (SOI) CMOS avalanche photodiode photoreceiver is presented. The photoreceiver consists of a high gain (>30), low voltage (<20 V) Geiger-mode avalanche photodiode, operated below breakdown in avalanche mode, monolithically integrated with a transimpedance amplifier (TZ) in a 1.5 mum hybrid bulk/SOI CMOS process.

DOI 10.1049/el:20030187