Klar, PJ,Gruning, H,Heimbrodt, W,Weiser, G,Koch, J,Volz, K,Stolz, W,Koch, SW,Tomic, S,Choulis, SA,Hosea, TJC,O'Reilly, EP,Hofmann, M,Hader, J,Moloney, JV;
Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In) (N, As)