O'Brien, P,Moorhouse, C,Braddell, J,McInerney, J;

1998

March

Electronic Letters

Imaging of curved facet unstable resonator semiconductor lasers operating at 980 nm

Validated

()

GAIN REGIONS HIGH-POWER

34

561

562

A novel technique is presented for imaging the interior of high power semiconductor lasers and amplifiers based on viewing the scattered spontaneous emission from the active region through the substrate. To demonstrate its potential the authors have fabricated novel unstable resonator semiconductor lasers using a dry-etch process and successfully imaged the optical field distribution including an internal focal point.