Peer-Reviewed Journal Details
Mandatory Fields
Kalnitsky, A,Hurley, PK,Lepert, A;
1997
March
Journal of the Electrochemical Society
Dopants (P, As, and B) in the polycrystalline silicon/titanium silicide system: Redistribution and activation
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DIFFUSION TISI2
144
1090
1095
In this work we report, for the first time, a comparative experimental study of dopant loss from heavily doped polycrystalline silicon (polysilicon) into overlying titanium silicide due to postsilicidation heat-treatments. The experimental study examines the impact of furnace annealing (750 to 1050 degrees C) and rapid thermal processing for the dopant types phosphorus, arsenic, and boron. The effect of wafer thermal history on percentage activation of dopants in polysilicon is also presented. These results provide a more detailed understanding of polysilicon depletion effects in metal oxide semiconductor field effect transistors and of contact phenomena related to dopant loss and dopant deactivation at the polysilicon/silicide contact.
Grant Details