CONCANNON, A,MATHEWSON, A,PICCININI, F,MEI, GL,BEZ, R,LOMBARDI, C;

1994

October

Rna-A Publication of The Rna Society

A MODEL FOR HOT-ELECTRON AND HOT-HOLE INJECTION IN FLASH EEPROM PROGRAMMING

Validated

()

CHANNEL

25

469

473

A new model for hot-electron and hot-hole injection is presented. The model has been integrated into a two-dimensional device simulator for the purpose of flash EEPROM programming simulation. The model is demonstrated to be accurate over a range of floating gate voltages, by comparison with measured data from flash EEPROM devices of different gate lengths under different programming conditions.