CORDERO, N,MCCARTHY, K,LYDEN, C,KELLY, WM;

1993

August

IEE Proceedings-G Circuits Devices and Systems

ELECTRON-DRIFT VELOCITY MODEL FOR SIMULATION OF INGAAS JFETS

Validated

()

JFETS NUMERICAL MODELING IN0.53GA0.47AS

140

261

263

Simulations of InGaAs JFETs were carried out using a two-dimensional numerical simulator. The results show that the electron drift velocity field characteristic is very important in modelling the Id/V ds behaviour of these devices. From comparison with experimental results, we conclude that it is appropriate to use a velocity field dependence function for InGaAs, similar to the drift velocity function used for Si JFETs.