Zhang, J;Haq, B;O'Callaghan, J;Gocalinska, A;Pelucchi, E;Trindade, AJ;Corbett, B;Morthier, G;Roelkens, G

2018

April

Optics Express

Transfer-printing-based integration of a III-V-on-silicon distributed feedback laser

Validated

Altmetric: 1 ()

MICRORING RESONATORS SI

26

8821

8830

An electrically pumped DFB laser integrated on and coupled to a silicon waveguide circuit is demonstrated by transfer printing a 40 x 970 mu m(2) III-V coupon, defined on a III-V epitaxial wafer. A second-order grating defined in the silicon device layer with a period of 477 nm and a duty cycle of 75% was used for realizing single mode emission, while an adiabatic taper structure is used for coupling to the silicon waveguide layer. 18 mA threshold current and a maximum single-sided waveguide-coupled output power above 2 mW is obtained at 20 degrees C. Single mode operation around 1550 nm with >40 dB side mode suppression ratio (SMSR) is realized. This new integration approach allows for the very efficient use of the III-V material and the massively parallel integration of these coupons on a silicon photonic integrated circuit wafer. It also allows for the intimate integration of III-V opto-electronic components based on different epitaxial layer structures. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

WASHINGTON

1094-4087

10.1364/OE.26.008821