Duggan, SP;Yang, H;Kelly, NP;Caro, L;Dernaika, M;Shayesteh, M;Gocalinska, A;Thomas, K;Pelucchi, E;Corbett, B;Peters, FH

2018

October

Microwave and Optical Technology Letters

P-substrate InP-based 1.5 m lasers using an internal carbon-doped layer to block p-dopant diffusion

Validated

Altmetric: 1 ()

60

2363

2367

P-substrate AlGaInAs/InP lasers are enabled using an internal carbon-doped layer to block Zn-diffusion. These inverted lasers are developed for the aim of further monolithic vertical integration with passive or active material, which would allow full system on-chip integration. The lasers emit at 1.5 mu m making them ideal for telecommunication applications. Different p-substrate laser designs were grown to quantify the effect the carbon doped layer had on blocking Zn p-dopants diffusion, which permits the long growths necessary for vertical integration. Current, voltage, and capacitance measurements were used to examine the different laser designs, proving that Zn p-dopant diffusion is responsible for psubstrate laser failure.

HOBOKEN

0895-2477

10.1002/mop.31364