TTorchia, Pasqualino; Pampili, Pietro; O’Connell, John; O’Brien, Joe; White, Mary; Schmidt, Michael; Sheehan, Brendan; Waldron, Finbarr; Holmes, Justin D.; Monaghan, Scott; Duffy, Ray; Trajkovic, T.; Kilchytska, V.; Gammon, P.; Cherkaoui, Karim; Hurley, Paul K.; Gity, Farzan

2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS)

Influence of free radical surface activation on Si/SiC heterogeneous integration by direct wafer bonding

2017

Unknown

Validated

0

()

Direct wafer bonding Free radical surface activation Heterogenious integration Si SiC

Athens, Greece

03-APR-17

05-APR-17

In this study, a surface activated bonding method using remote plasma is applied to realize the direct wafer bonding of Si and SiC. A comparison of different surface treatments is reported. Hydrophilic and hydrophobic wafers have been exposed to in-situ argon and nitrogen radicals generated by remote plasma for surface activation before bonding. A comparison of the bonding yield and surface condition has been conducted and analyzed as a function of the surface treatments. It has been shown that N2 plasma leads to the highest yield of > 97 %, strongest bond of > 360 N and interfacial layer (IL) thickness of ~1.5 nm.