Lebedev, DV;Mintairov, AM;Kulagina, MM;Troshkov, SI;Kapaldo, J;Merz, JL;Rouvimov, S;Juska, G;Gocalinska, A;Moroni, ST;Pelucchi, E

17TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS (RYCPS 2015)

Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity

2016

January

Validated

1

WOS: 1 ()

MICROCAVITY THRESHOLD

AlInAs microdisk cavities having quality factor Q similar to 15 000 were fabricated from lattice-matched InP/AlInAs (interface/aggregation) quantum dot (QD) structures using wet chemical etching. The QD emission coupled to whispering gallery modes was observed at spectral range 920 - 1000 nm at temperatures of 10 - 160 K. The laser generation with threshold power density of 50 W/cm(2) at T= 10 K was observed under optical pumping. It was found that the spontaneous emission coupling factor beta equals 0.23 for these microdisks. The low temperature lasing operation and the small coupling factors observed suggest the existence of small QDs formed at the InP/InAlAs interface as the main active elements.

10.1088/1742-6596/690/1/012023