Conference Publication Details
Mandatory Fields
Caruso, Enrico; Lin, Jun; Burke, K. F.; Cherkaoui,Karim; Esseni, D.; Gity, Farzan; Monaghan, Scott; Palestri, P.; Hurley, Paul K.; Selmi, L.
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) 2018
Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks
Scopus: 3 ()
Optional Fields
Capacitance Electron traps Gallium arsenide Hole traps III-V semiconductors Indium compounds Interface states MOS capacitors Technology CAD Multifrequency CV-curves TCAD simulations Accumulation capacitance versus Frequency Sensitivity analysis Border trap profiling Capacitance-voltage curves MOSCAP Density of states Oxide capacitance Al2O3/InGaAs stacks Capacitance-voltage characteristics Dielectrics Analytical models Mathematical model Dielectric measurement Dispersion III-V compounds TCAD simulation Border traps Parameter extraction C-V Trap volume
This paper reports physics based TCAD simulations of multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs including the AC response of the border traps. The calculations reproduce the experimental inversion and accumulation capacitance versus frequency, and provide a means to profile the space and energy density of states of border traps. A sensitivity analysis of the results to border traps' distribution is carried out changing the trap volume and the oxide capacitance.
Grant Details