Mandatory Fields

Authors

Caruso, Enrico; Lin, Jun; Burke, K. F.; Cherkaoui,Karim; Esseni, D.; Gity, Farzan; Monaghan, Scott; Palestri, P.; Hurley, Paul K.; Selmi, L.

Conference Title

Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) 2018

Title of Paper

Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks

Year

2018

Month

March

Status

Validated

Peer Reviewed

Times Cited

Scopus: 3 ()

Optional Fields

Keywords

Capacitance Electron traps Gallium arsenide Hole traps III-V semiconductors Indium compounds Interface states MOS capacitors Technology CAD Multifrequency CV-curves TCAD simulations Accumulation capacitance versus Frequency Sensitivity analysis Border trap profiling Capacitance-voltage curves MOSCAP Density of states Oxide capacitance Al2O3/InGaAs stacks Capacitance-voltage characteristics Dielectrics Analytical models Mathematical model Dielectric measurement Dispersion III-V compounds TCAD simulation Border traps Parameter extraction C-V Trap volume

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Abstract

This paper reports physics based TCAD simulations of multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs including the AC response of the border traps. The calculations reproduce the experimental inversion and accumulation capacitance versus frequency, and provide a means to profile the space and energy density of states of border traps. A sensitivity analysis of the results to border traps' distribution is carried out changing the trap volume and the oxide capacitance.

Funded By

URL

DOI Link

10.1109/ULIS.2018.8354757

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