Loi, R;O'Callaghan, J;Roycroft, B;Quan, ZH;Thomas, K;Gocalinska, A;Pelucchi, E;Trindade, AJ;Bower, CA;Corbett, B

2018

December

Journal of Lightwave Technology

Thermal Analysis of InP Lasers Transfer Printed to Silicon Photonics Substrates

Validated

Altmetric: 4 ()

FABRY-PEROT LASERS INTEGRATION

36

5935

5941

The thermal performance of Fabry-Perot InP lasers integrated onto different silicon photonics substrates by micro-transfer printing is assessed. 500-mu m-long ridge waveguide lasers on the original 350-mu m-thick InP have an experimental thermal impedance, Z(EXP), of 57 K/W that is reduced to 38 K/W after printing to a 500-mu m-thick Si substrate. Z(EXP) for lasers printed on silicon-on-insulator wafers is similar to 94 K/W, which is more than two times higher than that of the laser printed on the Si substrate. Z(EXP) of lasers printed on thermally insulating layers like benzocy-clobutene (BCB) or SiO2 increases with the thickness of the layer. BCB adhesive layers as thin as 50 nm limit Z(EXP) to be greater than 55 K/W. The thermal properties for the different situations were modeled using finite-element simulations which confirmed the experimental results within 10% accuracy. The simulations show how changes in the geometry and the materials of the integration platform can influence the resulting thermal impedance.

PISCATAWAY

0733-8724

10.1109/JLT.2018.2881179