Lebedev, D. V.; Vlasov, A. S.; Kulagina, M. M.; Troshkov, S. I.; Guseva, Y. A.;Pelucchi, Emanuele; Gocalinska, Agnieszka; Juska, Gediminas;Romanova, A. Y.; Buriak, P. A.; Smirnov, V. I.; Shelaev, A. V.; Bykov, V. A.; Mintairov, A. M.

2018

December

Semiconductors

Low threshold lasing in InP/GaInP quantum dot microdisks

Validated

WOS: 3 ()

Whispering gallery modes Laser

52

14

1894

1897

We report a realization of room temperature lasing threshold of 1 W in GaInP microdisk containing a few self-aggregated InP/GaInP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. InP/GaInP QD microdisk cavities emitting in the spectral range of 700-800 nm and having the size of 2m, free spectral range of 35 nm and quality factors Q 4000 were formed by wet chemical etching. Low dot density (2 m(-2)) and large dot size (150 nm), suggesting a single dot lasing and maximum overlap of QD and cavity mode, were achieved using deposition of 3 ML of InP layer at 700 degrees C.

MOSCOW

1063-7826

10.1134/S1063782618140166