Tian, Y;Li, JY;Kirch, JD;Sigler, C;Mawst, L;Pelucchi, E;Peters, FH;Hall, DC

2019

January

Physica Status Solidi A-Applications and Materials Science

High-Index-Contrast lambda = 1.55 mu m AlInGaAs/InP Laser Heterostructure Waveguides Through Selective Core Oxidation

Validated

WOS: 1 ()

THERMAL-DECOMPOSITION WET OXIDATION NATIVE OXIDES INP SURFACES ALGAAS FACET INALAS LAYER BENDS

216

A deep-etched high-index-contrast ridge waveguide for low bend loss photonic integration is realized through selective lateral oxidation of a lambda = 1.55 mu m AlInGaAs multi-quantum well diode laser heterostructure waveguide core layer sandwiched between InP cladding layers. The process is enabled by first depositing a thin protective layer to fully suppress the thermal dissociation of exposed InP surfaces during the subsequent oxygen-enhanced wet thermal oxidation process. Either approximate to 30-100 nm of InGaAs grow through selective epitaxial regrowth via MOCVD or approximate to 6 angstrom of HfO2 grows via atomic layer deposition is found to be effective at preventing dissociation damage. A lateral oxidation depth of approximate to 1.0 mu m is achieved with a 3 h oxidation at 525 degrees C, yielding a buried oxide high optical confinement waveguide with reduced capacitance and contact resistance, suitable for the integration of high-speed, low-bend loss integrated laser devices.

WEINHEIM

1862-6300

10.1002/pssa.201800495