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Ponath, P;Posadas, AB;Ren, Y;Wu, XY;Lai, KJ;Demkov, A;Schmidt, M;Duffy, R;Hurley, P;Wang, J;Young, C;Vasudevan, RK;Okatan, MB;Jesse, S;Kalinin, SV

Conference Title

2017 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT)

Title of Paper

Advances of the development of a ferroelectric field-effect transistor on Ge(001)

Year

2017

Month

January

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WOS: 1 ()

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Abstract

Here we report the recent advances towards the ferroelectric field-effect on Ge(001). We will demonstrate carrier density modulation in the underlying Ge(001) substrate by switching the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 on Ge. Recent results of patterning BaTiO3 for device applications and electrical properties of Pt/BTO/Ge heterostructures will be addressed.

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