Peer-Reviewed Journal Details
Mandatory Fields
Dimastrodonato V.;Mereni L.;Young R.;Pelucchi E.
2011
January
Journal of Crystal Growth
Relevance of the purity level in a MetalOrganic Vapour Phase Epitaxy reactor environment for the growth of high quality pyramidal site-controlled Quantum Dots
Validated
Scopus: 4 ()
Optional Fields
A1. Nanostructures A3. Organometallic vapour phase epitaxy B1. Arsenates B2. Semiconducting IIIV materials
315
1
119
122
We report in this work on the spectral purity of pyramidal site-controlled InGaAs/AlGaAs Quantum Dots grown by metal-organic vapour phase epitaxy on (1 1 1)B oriented GaAs substrates. Extremely sharp emission peaks were found, showing linewidths surprisingly narrow (~27 µeV) and comparable to those that can be obtained by Molecular Beam Epitaxy in an ultra-high vacuum environment. A careful reactor handling is regarded as a crucial step toward the fabrication of high optical quality systems. © 2010 Elsevier B.V.
0022-0248
10.1016/j.jcrysgro.2010.09.011
Grant Details