Conference Publication Details
Mandatory Fields
Shayesteh M.;Daunt C.;O'Connell D.;Djara V.;White M.;Long B.;Duffy R.
European Solid-State Device Research Conference
N-type doped germanium contact resistance extraction and evaluation for advanced devices
2011
December
Validated
1
Scopus: 1 ()
Optional Fields
235
238
The authors extract contact resistivity of NiGe layers on phosphorus-doped and arsenic-doped germanium, using the Transfer Length Method. It is shown experimentally that higher implant dose yields lower contact resistivity. Furthermore phosphorus is a better choice of dopant in terms of contact resistance and sheet resistance at low activation anneal temperatures, such as 500C. The impact of high contact resistance is evaluated for 22 nm technology NMOS germanium devices and beyond. 2011 IEEE.
10.1109/ESSDERC.2011.6044191
Grant Details