Here we present a systematic study of the morphology of MOVPE grown homoepitaxial indium phosphide films by means of Atomic Force Microscopy. Single layers of InP grown on (001) vicinal surfaces in temperature range spanning across 200 °C were investigated with focus drawn to the behaviour of crystallographic steps on the sample surfaces in respect to the growth conditions and substrate misorientation. Direct comparison of several different surface organizations is shown, providing arguments for careful selection of the growth parameters while optimising the design for more complex structures. © VDE VERLAG GMBH.