© 2017 IEEE. We present a DC-AC Hall-effect analysis on transition-metal-dichalcogenides comprising natural crystals of molybdenum disulfide and tungsten diselenide; and synthetic crystals of hafnium diselenide, molybdenum ditelluride, molybdenum diselenide and niobium-doped molybdenum disulfide. We observe a wide range of Hall mobility and carrier concentration values with either a net electron or hole carrier type. The synthetic niobium-doped molybdenum disulfide crystal exhibits a net hole carrier type and a carrier concentration approximately two orders of magnitude higher than a non-intentionally doped natural molybdenum disulfide crystal, with an equivalent reduction in Hall mobility. This synthetic niobium-doped molybdenum disulfide crystal also shows a significantly reduced resistivity when compared to the other crystals. Secondary ion mass spectrometry shows higher counts of niobium in the intentionally-doped synthetic niobium-molybdenum disulfide crystal, in addition to various other high contamination counts in both the natural and synthetic molybdenum disulfide crystals, correlating well with the significant range of high resistivity observed. Compared to silicon, the resistivity in these contaminated TMD materials reduces less rapidly with increasing equivalent carrier concentration levels, and the resistivity is higher in magnitude by a factor of approximately 4-10 when compared to silicon, which in turn reduces the achievable Hall mobility by at least a similar factor. It is therefore suggested that more controlled growth methods of TMD materials which lead to significantly reduced contamination elements and levels, with improved stoichiometry, could potentially provide a significant increase in Hall mobility assuming no change in carrier properties.