Conference Publication Details
Mandatory Fields
Gammon P.;Li F.;Chan C.;Sanchez A.;Hindmarsh S.;Gity F.;Trajkovic T.;Kilchytska V.;Pathirana V.;Camuso G.;Ben Ali K.;Flandre D.;Mawby P.;Gardner J.
Materials Science Forum
The effect of interfacial charge on the development of wafer bonded silicon-on-silicon-carbide power devices
2017
January
Validated
1
Scopus: 3 ()
Optional Fields
Harsh environment Lateral MOSFET Silicon Silicon carbide Wafer bonding
747
750
2017 Trans Tech Publications, Switzerland. A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to semi-insulating 4H silicon carbide (SiC) leading to a Si/SiC substrate solution that promises to combine the benefits of siliconon- insulator (SOI) technology with that of SiC. Here, details of a process are given to produce thin films of silicon 1 and 2 m thick on the SiC. Simple metal-oxide-semiconductor capacitors (MOSCs) and Schottky diodes in these layers revealed that the Si device layer that had been expected to be n-type, was now behaving as a p-type semiconductor. Transmission electron microscopy (TEM) of the interface revealed that the high temperature process employed to transfer the Si device layer from the SOI to the SiC substrate caused lateral inhomogeneity and damage at the interface. This is expected to have increased the amount of trapped charge at the interface, leading to Fermi pinning at the interface, and band bending throughout the Si layer.
10.4028/www.scientific.net/MSF.897.747
Grant Details