© 2015 IEEE. High bandwidth 2 µm wavelength surface normal p-i-n photodiodes using a high indium-content InGaAs strain-relaxed absorbing layer clad by p and n doped AlInGaAs layers are realised. A parabolic grading was used to relax the lattice constant from that of the InP substrate. We compare structures with different p-doping profiles and absorber thicknesses to achieve a 3-dB bandwidth of around 10 GHz while maintaining a photoresponsivity of 0.93 A/W. A clear opening of the 10 Gbit/s eye pattern was obtained with an input power of-3.07 dBm. By temperature-control of the mesa passivation process the device leakage was reduced to 0.52 µA at-5 V bias.