Conference Publication Details
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Sabui G.;Zubialevich V.;White M.;Pampili P.;Parbrook P.;McLaren M.;Arredondo-Arechavala M.;Shen Z.
Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Design considerations of vertical GaN nanowire Schottky barrier diodes
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GaN Nanowire Power semiconductor devices Vertical GaN Wide bandgap devices
2017 IEEJ. Design considerations for vertical Gallium Nitride (GaN) nanowire Schottky barrier diodes (NWSBDs) for high voltage applications is discussed in this paper. Preliminary quasi-vertical NWSBDs fabricated on a Sapphire substrate show rectifying properties with breakdown voltage of 100 V. The principle of dielectric Reduced SURface Field (RESURF) which is naturally compatible with the NW structure, is utilized to block high voltages (> 600 V) within the fabrication constraints of nano-pillar height and drift doping concentration. Design considerations for the NWSBD is explored through 3D TCAD simulations. TCAD simulations show the NWSBDs can block voltages upward of 700 V with very low on-resistance with optimal design. The measured and simulated results are compared with state of the art GaN devices to provide an understanding of the true potential of the GaN NW architecture as power devices offering high breakdown voltages and low on-state resistance and a reliable device operation, all on a vertical architecture and a non-native substrate.
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